Stacked Structure (IMAGE)
Caption
The JMU researchers plan to realize such a stacked structure. It consists of metallic graphene (bottom), insulating boron nitride (middle) and semiconducting molybdenum disulfide (top). The red dot symbolizes the single spin defect in one of the boron nitride layers. The defect can serve as a local probe in the stack.
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(Image: Andreas Gottscholl / University of Wuerzburg)
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