Rewritable Data Test of Fabricated Memory Cell Array (IMAGE)

Korea Institute of Science and Technology

Rewritable Data Test of Fabricated Memory Cell Array

Caption

Figure 2 (a) is the picture of a previous organic resistive flexible memory cell. Due to the interference of nearby cells (b), the current value '0' is mis-read as '1' as illustrated in the left bar graph in (c). The recently developed all-organic 1D-1R diode (d) does not suffer from cross-talk between cells (e), and as shown in the bar distribution, it accurately reads the current values '0' and '1'. Fig. 2 (f) shows the demonstration of the acronym for the Korea Institute of Science and Technology, 'KIST' based on the distribution of the current values '0' and '1' and by using the ASCII code.

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©<i>Nature Communications</i>

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