Physics for the Mechanism of Slow Change in Microscopic Magnetic Structures Revealed (2 of 2) (IMAGE)

Tohoku University

Physics for the Mechanism of Slow Change in Microscopic Magnetic Structures Revealed (2 of 2)

Caption

Schematic of a three-terminal memory device with current-induced domain wall motion. To write the information, current is applied to magnetic wire having domain wall (DW) to drag it.

Credit

Tohoku University

Usage Restrictions

Credit: Tohoku University

License

Licensed content

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.