Summary:
Texas Tech University’s Whitacre College has secured a $14 million grant from the U.S. Department of Defense to lead the Advanced Semiconductor Power Devices Program, aiming to design high-performance, reliable power electronic devices using wide and ultrawide bandgap semiconductors. These technologies will enhance defense and industrial systems by improving performance in harsh environments, supporting innovation and strengthening national security.
Why This Matters:
- National Security Advancement: The research supports next-generation defense systems, including radar and electronic warfare, ensuring technological superiority in critical applications.
- Economic and Industrial Impact: The development of efficient power devices enables more reliable and energy-saving operations in manufacturing, electrical grids and heavy equipment sectors.
- Educational and Collaborative Growth: The initiative fosters interdisciplinary research and hands-on training for students across multiple universities, building future expertise in semiconductor and power systems technology.
Texas Tech University’s Edward E. Whitacre Jr. College of Engineering will earn $14 million from the U.S. Department of Defense (DoD) Army Research Laboratory for an Advanced Semiconductor Power Devices Program that will develop reliable, high-performance and power electronic devices with wide and ultrawide bandgap semiconductors.
High-electron-mobility transistors, metal-semiconductor field-effect transistors and broadband high-efficiency power amplifiers are among the key components to be designed and fabricated. These devices will enable improvements in high-power systems for defense, radar and communication applications – strengthening technological capabilities, fostering innovation in semiconductor materials and supporting national security in harsh environments.
In addition, the devices will have industrial applications such as controlling and converting large amounts of electrical energy. This efficiency will promote overall process productivity through precise and reliable operation of machinery with reduced energy consumption. This could impact motor drives for manufacturing, power supplies for heavy equipment, switchgear in electrical grids and industrial heating systems.
“The Advanced Power Semiconductor Devices grant marks a significant milestone for Texas Tech University, positioning us at the forefront of innovative research in high-power semiconductor technology,” said Hieu Nguyen, associate professor of electrical and computer engineering (ECE). “Ultimately, our work aims to enhance national security and drive technological innovation, benefiting Texas, the nation and the global community.”
The researchers will conduct comprehensive performance evaluations across various applications, including high-power/high-voltage systems, electronic warfare, surveillance, radar, multifunctional radio frequency communications, sensing, and power electronics for harsh environments. They will emphasize device packaging, failure analysis, heat dissipation and thermal management to ensure robustness and longevity. Additionally, the project will analyze the structure and other qualities of wide and ultrawide bandgap semiconductors, correlating gained insights with experimental results to inform future innovations.
This initiative is led by Stephen Bayne, vice chancellor for Innovation & Collaboration and the executive director of the Critical Infrastructure Security Institute. His team comprises ECE Professors Ayrton Bernussi, Donald Lie and Ravi Joshi; ECE Associate Professors Nguyen, Brian Nutter; Global Laboratory for Energy Asset Management & Manufacturing (GLEAMM) Senior Director Argenis Bilbao; and Chemical Engineering Assistant Professor Joseph Gauthier.
The program also integrates research and education plans at different levels with Associate Professor Manuel Garcia of Angelo State University and Assistant Professor Pranaya Pokharel of Midwestern State University.
“This program will not only advance cutting-edge materials and device design but also foster interdisciplinary collaboration and educational opportunities for our students,” Nguyen said. “They will gain experience in the device design/simulation, epitaxial growth techniques, device fabrication and characterization of semiconductor power devices.”