Mulpuri Investigating Fundamental Defects & Their Mitigation In Silicon Carbide & III-N Materials For High Voltage Applications
V. Rao Mulpuri, Professor, Electrical and Computer Engineering, College of Engineering and Computing (CEC), received funding for the project: “Investigation of fundamental defects and their mitigation in SiC and III-N materials for High Voltage applications.”
He is undertaking this work to help create materials for silicon carbide (SiC) and gallium nitride (GaN)-based devices.
Mulpuri will utilize unique facilities such as X-ray topography, laser UV photoluminescence, high-resolution, 9kW, 2D-XRD and other characterization facilities to investigate material issues that have a direct impact on 1kV-20kV devices.
He will also develop and implement machine learning algorithms to identify and delineate material defects in wide bandgap materials SiC and III-N.
Mulpuri received $80,000 from the Naval Research Laboratory for this project. Funding began in Sept. 2026 and will end in Sept. 2027.
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