image: Wavefunction of an electron bound to a 31P donor in silicon and subject to an electric field. A positive bias on a gate located above the donor pulls the electron wave function towards the Si/SiO2 interface and away from the nucleus. This modifies the hyperfine coupling, shifts the resonance frequencies of electron and nucleus, and allows addressing of individual donor qubits in a global microwave field. This material relates to a paper that appeared in the April 10, 2015, issue of Science, published by AAAS. The paper, by A. Laucht at University of New South Wales in Sydney, NSW, Australia, and colleagues was titled, "Electrically controlling single-spin qubits in a continuous microwave field." view more
Credit: [Credit: A. Laucht, UNSW Australia]