image: Image of hBN crystal grown on the a-plane sapphire substrate (obtained with a Ni-Mo solvent prepared at 1400°C). This image relates to an article that appeared in the Aug. 17, 2007, issue of the journal Science, published by AAAS. The study, by Dr. Yoichi Kubota and colleagues of the National Institute for Materials Science in Ibaraki, Japan, was titled "Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure." view more
Credit: Photo provided by <i>Science</i>-AAAS.