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Perovskite-transition metal dichalcogenides heterostructures: Recent advances and future perspectives

Peer-Reviewed Publication

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image: Fig. 1| (a) MAPbI3/MoS2 PDs with their relative band alignment and charge transfer mechanisms using 1T and 2H phases of MoS2. (b) Schematic of planar (top) and vertical (bottom) structures of MAPbI3/MoS2 PDs and the drain bias and illumination effect on carrier transportation and separation. (c) schematic of MAPbI3/BP/MoS2 PD, and charge transfer mechanism showing both type-I and type-II band alignment at perovskite/BP and BP/MoS2 interfaces, respectively. (d) The energy-band diagram under flat-band conditions of planar inverted perovskite solar cells with different materials as the hole transport layer, including MoS2. view more 

Credit: OEA

A new publication from Opto-Electronic Science; DOI  10.29026/oes.2022.220006 considers perovskite-transition metal dichalcogenides heterostructures.


The newly emerging semiconductor materials such as halide perovskites and transition metal dichalcogenides (TMDs) have attracted intense attentions recently for their many fascinating properties. Altering the composition of perovskites allows bandgap and optical properties tunability. Perovskite based solar cells are progressing much faster in energy conversion efficiency than other types of photovoltaics. However, perovskite materials suffer from poor environmental stability. On the other side, TMDs and their heterostructures showed many intriguing optical and electronic properties with great potentials for optoelectronic applications. Nevertheless, the light absorption of TMDs is limited due to their atomic-scale thickness. Combining perovskites and TMDs in the form of heterostructures provides a way to extend the already fascinating properties of the components and allows the demonstration of high-performance optoelectronic devices.


In this review the authors present the state-of-the-art of perovskite and TMD materials as well as their heterostructures. Starting from a brief on the fundamental and unique properties of perovskites and TMDs, and discussing the distinctive properties of perovskite-TMD heterostructures. Different synthesis and fabrication strategies of these materials and their heterostructures are presented in detail followed by their optoelectronic applications. Lastly, the authors give their perspectives on the potentially exciting research topics to perovskite-TMD heterostructures in terms of fundamental studies and optoelectronic applications such as photodetectors, solar cells and light emitters.


This article summarizes the fundamental properties of perovskite, transition metal dichalcogenides (TMDs) and their heterostructures. The band alignment and carrier transport in perovskite-TMDs heterostructures are described in detail. The effect of using different material systems on the optoelectronic properties and performance of perovskite-TMD heterostructures are explained. The methods of synthesis of various perovskites, TMDs and their heterostructures are introduced followed by the recent integration and fabrication techniques in different device geometries. The state of the art optoelectronic applications of perovskite-TMD heterostructures especially in photodetectors and solar cells are comprehensively reviewed and with perspective of future research and development discussed.


The effect of using different band alignments between perovskite and TMDs (type I, II, and III), materials of different phases (metallic and semiconducting), and different structures (planer and vertical) on the mechanism and performance of PDs are explained. Due to their significantly tunable work functions, TMDs are used as a transport layer in perovskite solar cells to enhance the device performance and stability. The presence of TMDs enhances charge extraction at the interface and suppresses interfacial charge recombination in perovskite solar cells, which ultimately augments power conversion efficiency.

Based on the current state-of-the-art of perovskite-TMD heterostructures, a summary of the performance parameters for photodetectors and solar cells is introduced. For instance, in comparison to the commercially available PDs, the sensitivity of a few heterojunction PDs of perovskite-TMD heterostructures is higher. However, their response speeds are sacrificed. Additionally, the sensitivity of most perovskite-TMD PDs is in the visible to near IR range due to the band gap of the parent materials. Development of new materials and structures to demonstrate high performance and highly sensitive PDs in longer wavelengths regime is in urgent need currently.


Dr. Jinghua TENG is a Principal Scientist and Senior Group Leader in the Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR) and an Adjunct Professor in the School of Physical and Mathematical Science, Nanyang Technological University, Singapore. He has edited/authored 5 book/book chapters, published over 230 journal papers, filed 29 primary patents and contributed to over 270 conference presentations including many invited talks. The research in his group include nano-optics & photonics, metamaterials and metasurfaces, 2D optoelectronics, THz technology, plasmonics, semiconductor materials and devices. Dr. Teng is a Fellow of SPIE and an editorial board member of the Journal of Optics, Opto-Electronic Advances, PhotoniX, Journal of Molecular and Engineering Materials and A*STAR Research Publication. He had won the IES Prestigious Engineering Achievement Awards 2016 and IPS Nanotechnology Medal and Prize 2020.


Article reference Elbanna A, Chaykun K, Lekina Y, Liu YD, Febriansyah B et al. Perovskite-transition metal dichalcogenides heterostructures: recent advances and future perspectives. Opto-Electron Sci 1, 220006 (2022). doi: 10.29026/oes.2022.220006 


Keywords: transition metal dichalcogenides / perovskites / heterostructures / photodetectors / solar cells / 2D materials

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Dr. Ze Xiang Shen is a Professor of Physics, Co-Director, Centre for Disruptive Photonics Technologies. He is also Associate Dean, Graduate College, Nanyang Technological University. His research involves the study of 2D materials and Perovskites using ultra Low wavenumber Raman spectroscopy, photoluminescence and time-resolved spectroscopy in combination with high pressure and low temperature. He also works on graphene-based composites for energy storage. He is winner of NTU Nanyang Award for Research and Innovation, Gold Medal for Research Excellence by Institute of Physics Singapore, Honorary Professor of Moscow State University. He was awarded Outstanding Immigrant Award of Singapore in 2019.  

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Opto-Electronic Science (OES) is a peer-reviewed, open access, interdisciplinary and international journal published by The Institute of Optics and Electronics, Chinese Academy of Sciences as a sister journal of Opto-Electronic Advances (OEA, IF=9.682). OES is dedicated to providing a professional platform to promote academic exchange and accelerate innovation. OES publishes articles, reviews, and letters of the fundamental breakthroughs in basic science of optics and optoelectronics.

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