Figure 2 | The measurement results of KPFM and electrical performance on WS₂ lateral p-n homojunction (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Figure 2 | The measurement results of KPFM and electrical performance on WS₂ lateral p-n homojunction

Caption

(a) The contrastive KPFM mapping of the WS2 lateral p-n homojunction. The scale bar is 3 μm. (b) The surface potential difference of WS2 lateral p-n homojunction marked with the red line in (a). (c) Output characteristic curves of lateral WS2 p-n homojunction FET at different gate voltages. (d) Transfer characteristic curves of WS2 and N-WS2 (with implantation dose of 1×1014 ions cm-2) FETs at bias of 1 V

Credit

by Yufan Kang, Yongfeng Pei, Dong He, Hang Xu, Mingjun Ma, Jialu Yan, Changzhong Jiang, Wenqing Li, and Xiangheng Xiao

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CC BY

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