Fig. 2 (IMAGE)

The University of Osaka

Fig. 2

Caption

Normalized drain current and field-effect mobility as a function of gate voltage for a SiC MOSFET fabricated in 2-step diluted hydrogen annealing process proposed in this study (drain voltage: 0.1 V). The field-effect mobility plot includes raw data (gray) and smoothed data (blue).

Credit

2025 Kobayashi et al., Performance and reliability improvements in SiC(0001) MOS devices via two-step annealing in H2/Ar gas mixtures. Applied Physics Express

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CC BY

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