Fig. 3 (IMAGE)

The University of Osaka

Fig. 3

Caption

Flat-band voltage drift as a function of stress time during stress-test measurement on SiC MOS capacitors. In the figure, conventional interface nitridation using NO (gray) and the 2-step diluted hydrogen annealing process (blue) proposed in this study are compared.

Credit

2025 Kobayashi et al., Performance and reliability improvements in SiC(0001) MOS devices via two-step annealing in H2/Ar gas mixtures. Applied Physics Express

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