Figure 2 | Self-alignment mechanism through directional photothermal regulation. (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Figure 2 | Self-alignment mechanism through directional photothermal regulation.

Caption

Figure 2 | Self-alignment mechanism through directional photothermal regulation. a, Simulated temperature field of stamps during misaligned IR laser irradiation for three different photothermal conversion layers: without carbon (by chip absorption), pure Gr, Gr-AC. (i) Temperature distribution at 10 ms and 30 ms. (ii) Relative temperature distribution along the horizontal coordinate at the bottom of PI layer under 30-ms IR irradiation. (iii) Heat flow distribution in the laser irradiated region of Gr-AC structure at 30 ms. b, Schematic diagram of the chip transfer process with laser offset irradiation. c, Snapshots of delamination of chips and stamps (TCGC and without carbon) under misaligned IR laser irradiation. d, Statistical results of transfer error of chips with different laser offset degrees (∆L/L). e, Correlation between delamination time difference (∆t) and transfer error at different Gaps. f, Simulation and experimental comparison of ∆t at different laser offset degrees (∆L/L). g Statistical results of chip position deviation under laser offset irradiation at a gap of 50 µm.

Credit

YongAn Huang et al.

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