ReRAM Memory Cell (IMAGE) Forschungszentrum Juelich Caption Formation of metallic Tantalum (Ta) filament within Ta/TaO(x)/Pt ReRAM memory cell is shown. Positively charged Ta(5+)-ions and oxygen vacancies (V(O)) contribute to the process. Credit Copyright: Forschungszentrum Juelich / RWTH Aachen / Poessinger Usage Restrictions Image may only be used with approprate credit. Image may only be used in conjunction with media reports about Forschungszentrum Juelich. License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.