(IMAGE)

Forschungszentrum Juelich

Caption

Formation of metallic Tantalum (Ta) filament within Ta/TaO(x)/Pt ReRAM memory cell is shown. Positively charged Ta(5+)-ions and oxygen vacancies (V(O)) contribute to the process.

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Copyright: Forschungszentrum Juelich / RWTH Aachen / Poessinger

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