Real-time and low-dose X-ray imaging with Cs2Ag0.6Na0.4In0.85Bi0.15Cl6 scintillator wafers (IMAGE)
Caption
a, Schematic of the X-ray imaging system. b, Integrated RL intensity of Cs2Ag0.6Na0.4In0.85Bi0.15Cl6 under thermal treatment for 50 h at 85°C followed by X-ray illumination for another 50 h. The moisture level was also recorded, and the RL was measured with an integrating sphere. The inset shows X-ray images of a circuit board acquired at three different stages (0 h, 50 h and 100 h). c, Stokes shift of Cs2Ag0.6Na0.4In1-yBiyCl6 with different Bi3+ contents. d, X-ray images of the test pattern plate acquired under different X-ray doses. e, Real-time X-ray images of finger bending.
Credit
Wenjuan Zhu, Wenbo Ma, Yirong Su, Zeng Chen, Xinya Chen, Yaoguang Ma, Lizhong Bai, Wenge Xiao, Tianyu Liu, Haiming Zhu, Xiaofeng Liu, Huafeng Liu, Xu Liu, and Yang (Michael) Yang
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