Simulated Relationship (IMAGE)

Japan Science and Technology Agency

Simulated Relationship

Caption

Simulated relationship between resistance ratio at on-state and off-state, required ferroelecric-HfO2 thickness, and memory cell diameter for targeting (left) 10nA read current and (right) 100nA read current, respectively. For such read current target, FTJ memory cell can be scaled down to 2nm diameter as long as ferroelectricity is maintained at 1~1.5nm film thickness.

Credit

Masaharu Kobayashi

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