Drain Current (IMAGE)

Japan Science and Technology Agency

Drain Current

Caption

Drain current versus gate voltage characteristics of metal-ferroelectrie-metal-insulator-semiconductor type FET with 30 percent Zr-doped HfO2 gate insulator. By switching gate bias direction at polarization switching, steep subthreshold slope less than 30mV/dec was clearly observed.

Credit

Masaharu Kobayashi

Usage Restrictions

None

License

Licensed content

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.