Gate Voltage (IMAGE)

Japan Science and Technology Agency

Gate Voltage

Caption

Drain current versus gate voltage characteristics of metal-antiferroelectric-metal-insulator-semiconductor type FET with 90 percent Zr-doped HfO2 gate insulator for area ratio of top and bottom electrodes of (left) 1:8, (center) 1:14, and (right) 1:32, respectively. For example, in the center figure, polarization switching does not happen in subthreshold region in forward sweep, however, polarization switching does happen in subthreshold region in backward sweep and thus subthoreshold slope becomes steeper than in forward sweep.

Credit

Masaharu Kobayashi

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