Figure 3 (IMAGE) Japan Science and Technology Agency Caption (a) Measured drain current versus gate voltage of an FeFET with 8nm-thick IGZO channel. Memory window of 0.5V and nearly ideal SS of 60mV/dec were achieved. (b) Measured field-effect mobility of the FeFET with IGZO channel. Mobility of 10cm2/Vs can be higher than that of poly-silicon channel at the same thickness. Credit Masaharu Kobayashi Usage Restrictions None License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.