Figure 3 (IMAGE)

Japan Science and Technology Agency

Figure 3

Caption

(a) Measured drain current versus gate voltage of an FeFET with 8nm-thick IGZO channel. Memory window of 0.5V and nearly ideal SS of 60mV/dec were achieved. (b) Measured field-effect mobility of the FeFET with IGZO channel. Mobility of 10cm2/Vs can be higher than that of poly-silicon channel at the same thickness.

Credit

Masaharu Kobayashi

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