Figure 1 (IMAGE)

Japan Science and Technology Agency

Figure 1

Caption

(a)Schematic of ferroelectric-HfO2 based FeFET with 3D vertical stack structure for high memory capacity. Poly-silicon is typically used as a channel material. In this work, we propose to use IGZO as a channel material. (b) Schematic illustration of current challenges of poly-silicon channel and possible solution by IGZO channel. Poly-silicon has low mobility in nanometer thickness region and forms low-k interfacial layer which causes voltage loss and charge trapping.

Credit

Masaharu Kobayashi

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