Figure 1 (IMAGE) Japan Science and Technology Agency Caption (a)Schematic of ferroelectric-HfO2 based FeFET with 3D vertical stack structure for high memory capacity. Poly-silicon is typically used as a channel material. In this work, we propose to use IGZO as a channel material. (b) Schematic illustration of current challenges of poly-silicon channel and possible solution by IGZO channel. Poly-silicon has low mobility in nanometer thickness region and forms low-k interfacial layer which causes voltage loss and charge trapping. Credit Masaharu Kobayashi Usage Restrictions None License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.