Figure 2 (IMAGE) Japan Science and Technology Agency Caption (a) Cross-sectional TEM image of a TiN/HfZrO2/IGZO capacitor. Each layer was uniformly formed. HfZrO2 layer is uniformly crystallized having ferroelectric phase. (b) Measured polarization charge versus voltage of a TiN/HfZrO2/IGZO capacitor. Clear ferroelectricity was confirmed. Credit Masaharu Kobayashi Usage Restrictions None License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.