Figure 2 (IMAGE)

Japan Science and Technology Agency

Figure 2

Caption

(a) Cross-sectional TEM image of a TiN/HfZrO2/IGZO capacitor. Each layer was uniformly formed. HfZrO2 layer is uniformly crystallized having ferroelectric phase. (b) Measured polarization charge versus voltage of a TiN/HfZrO2/IGZO capacitor. Clear ferroelectricity was confirmed.

Credit

Masaharu Kobayashi

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