Organic field-effect transistors (OFETs) are fundamental building blocks for flexible electronics, including flexible displays, wearable sensors and electronic skin. However, at the heterointerface between the organic semiconductor (OSC) and the dielectric layer where charge transport takes place, structural and energetic disorders inevitably introduce defects, which adversely affect device stability. To address these challenges, researchers from Tianjin University and collaborating institutions have developed a novel interfacial engineering strategy, in which ultrathin alkyl chains of alkylated OSC molecules are covalently attached to the OSC backbone. This approach effectively reduces the trap density at the OSC/dielectric interface, thereby enabling stable OFET operation. In addition, this strategy substantially decreases the dielectric layer thickness, which facilitates low‑voltage operation. As a result, OFETs constructed on the basis of this strategy operate stably at a low voltage of −1 V for over 10,000 s, while integrated logic circuits achieve high gain, fast switching and robust stability. This work provides a new pathway toward high-reliability flexible electronics.