Synergistically enhances piezoelectricity and resistivity of high temperature 0.3Na0.5Bi2.5Nb2O9-0.7Bi3TiNbO9 ceramics by (W,Cr) co-doping
Peer-Reviewed Publication
Updates every hour. Last Updated: 29-Oct-2026 18:16 ET (29-Oct-2026 22:16 GMT/UTC)
This study develops a novel bismuth layer-structured 0.3Na0.5Bi2.5Nb2O9-0.7Bi3Ti1-x(W1/3Cr2/3)xNbO9 solid solution via a solid-state reaction method. By B-site (W, Cr) co-doping, the optimized x=0.04 ceramics achieve a remarkable piezoelectric constant (d33=20.3 pC/N) alongside a high Curie temperature (TC=845.9 oC). The synergistic effect of [Nb/Ti]O6 octahedral distortion and (CrTi'-VO∙∙) defect dipole formation significantly enhances domain stability while effectively suppressing the oxygen vacancy concentration. Consequently, the material exhibits superior high-temperature resistivity (7.3×107 Ω·cm at 500 °C) and excellent thermal stability, retaining 93.1% of its initial d33 after annealing at 600 °C. These findings highlight its exceptional potential for advanced high-temperature piezoelectric sensors.
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