Bond-angle modulation in nucleation layer overcomes lattice-mismatch limits in Ga2O3 heteroepitaxy
Peer-Reviewed Publication
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Updates every hour. Last Updated: 15-May-2026 06:15 ET (15-May-2026 10:15 GMT/UTC)
A research team from Xiamen University has developed a novel bond-angle modulation strategy that overcomes fundamental lattice-mismatch limitations in the heteroepitaxial growth of β-Ga₂O₃ on sapphire substrates. By incorporating a gradient GaON nucleation layer with matched bond angles, they achieved high-crystal-quality films that significantly enhance ultraviolet photodetector performance.. This innovative approach significantly enhances crystalline quality, reducing rocking curve FWHM by 38.5% and screw dislocation density by 62%, leading to deep-UV photodetectors with exceptional performance (3821.6 A/W responsivity, 3.3 × 1016 Jones specific detectivity, and 30/20 ms response times). This study excels the conventional lattice-matching paradigm, offering a universally applicable strategy for the heteroepitaxial growth of mismatched semiconductor systems.
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