AI engineers know the ethical risks presented by AI, but workplace culture prevents action, study finds
Reports and Proceedings
Updates every hour. Last Updated: 28-Oct-2026 12:16 ET (28-Oct-2026 16:16 GMT/UTC)
As transistor dimensions approach the 1-nm technology node, maintaining both high driving current and strong electrostatic gate control has become a major challenge for next-generation electronics. Researchers have now proposed a constituent-layer-selective doping strategy for ZnO/GaN van der Waals heterostructure transistors, enabling simultaneous enhancement of carrier transport and gate controllability through a current confinement mechanism. The study provides a new pathway for ultra-scaled two-dimensional electronics beyond the Moore era.