Researchers in Japan showed that growing Eu-doped GaN on a semipolar GaN plane selectively forms highly efficient Eu luminescent centers while suppressing inefficient Eu clusters. The approach increased room-temperature red emission by 3.6 times, reduced efficiency droop, and points to brighter, wavelength-stable red LEDs for monolithically integrated full-color micro-LED displays using the GaN materials platform.

Researchers from the School of Electronic Science and Engineering at Southeast University, led by Prof. Zhenhua Ni and Prof. Junpeng Lu, have developed a pioneering computational spectrometer recently published in PhotoniX. The device utilizes a silicon photonic "Vernier Caliper" concept to overcome the fundamental trade-off between device footprint, bandwidth, and resolution. Operating within an ultra-compact footprint of only 55*35 µm², the spectrometer achieves an expansive bandwidth exceeding 160 nm and an average algorithm-enhanced spectral resolution of 1.35 pm. This performance establishes a record-breaking bandwidth-to-resolution-to-footprint ratio of over 61.5 µm^-2, demonstrating a significant advance for integrated spectrometers.

This breakthrough is achieved through a deep co-design of photonic hardware and computational science, moving beyond simple algorithmic compensation. The hardware architecture features cascaded Trapezoidal Subwavelength Grating Microring Resonators (TSWG-MRRs) that utilize dispersion engineering to suppress resonant periodicity. This deterministic design allows the device to scan a working window over 16 times larger than a standard microring's free spectral range. The system treats the intrinsic resonance peaks as orthogonal measurement bases and integrates an Nvidia Jetson GPU-accelerated unit to achieve real-time reconstruction. The team successfully resolved 49 absorption lines of hydrogen cyanide (H¹³C¹⁴N) with an accuracy exceeding commercial benchtop optical spectrum analyzers, validating its potential for gas sensing, chemical analysis, and lab-on-a-chip applications.

As the AI era accelerates the demand for advanced semiconductor packaging, a global joint research team has developed an Ultrafast Laser Chemical Vapor Deposition (ULCVD) technique. This breakthrough enables maskless, 3D direct-write patterning of highly conductive carbon circuits on all surfaces of transparent glass substrates, solving critical metallization challenges for Through-Glass Vias (TGV) and Redistribution Layers (RDL).