Breakthrough in low-power neuromorphic computing: novel 2D phase-transition memristor achieves ultrafast and energy-efficient switching
Peer-Reviewed Publication
Updates every hour. Last Updated: 25-Jun-2025 03:10 ET (25-Jun-2025 07:10 GMT/UTC)
A research team has developed a groundbreaking two-dimensional (2D) phase-transition memristor leveraging intrinsic ion migration for ultra-low power consumption and high endurance. Unlike conventional memristors that suffer from crystal damage and high energy demands, the newly developed Intrinsic Ion Migration (IIM) memristor eliminates the need for external ion intercalation. This innovative approach results in an unprecedented SET power consumption of just 1 μW at 100 mV and an ultrafast switching speed of 80 ns, positioning it as a promising candidate for next-generation neuromorphic computing and in-memory processing.
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Four University of Texas at Arlington faculty members have been named Senior Members of the National Academy of Inventors for their outstanding achievements in innovation. The UT Arlington honorees are Colin Cameron, professor of research in chemistry and biochemistry; Rasika Dias, distinguished professor of chemistry and biochemistry; Panos Shiakolas, associate professor of mechanical and aerospace engineering; and Baohong Yuan, distinguished professor of bioengineering.