11-Dec-2025
Engineering magnetism and thermal expansion in BiFeO3 for next-generation memory devices
Institute of Science TokyoPeer-Reviewed Publication
Using a dual-cation substitution approach, researchers at Science Tokyo introduced ferromagnetism into bismuth ferrite, a well-known and promising multiferroic material for next-generation memory technologies. By replacing ions at both the bismuth and iron sites with calcium ions and heavier elements, they modified the spin structure and achieved ferromagnetism at room temperature. Additionally, negative thermal expansion was observed. This ability to engineer magnetism and thermal expansion in a multiferroic material aids in realizing future memory devices.
- Journal
- Journal of the American Chemical Society
- Funder
- Japan Society for the Promotion of Science (JSPS) KAKENHI, Japan Science and Technology Agency-Core Research for Evolutionary Science and Technology (JST-CREST), Kanagawa Institute of Industrial Science and Technology, Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan Synchrotron Radiation Research Institute (JASRI), TSUBAME4.0 supercomputer at Institute of Science Tokyo