A transistor that operates at 600°C
Kyoto UniversityPeer-Reviewed Publication
Kyoto, Japan -- For more than two decades, silicon carbide -- SiC -- has been promoted as the key to developing extreme-environment electronics. Yet despite its promise, the field has remained stuck at the stage of basic research, so far failing to result in the development of practical devices. Now, a team of researchers at Kyoto University has set about to change that.
"We believe the lack of development is because the research community has been trying to apply silicon-era thinking to a fundamentally different material," says first author Mitsuaki Kaneko.
The team focused on junction field-effect transistors, also known as JFETs. Previous research has suggested that complementary JFETs, based on SiC JFETs, can be applied to low-power integrated circuits for operation in extreme environments. However, the JFETs that the researchers created previously -- which had conventional top-gate structures fabricated in semi-insulating SiC substrates -- suffered from low controllability and large leakage currents at high temperatures. This motivated the team to set their sights on solving these two issues, which they knew would be essential for practical use.
- Journal
- APL Electronic Devices
- Funder
- Canon Foundation for Scientific Research