Crystal-free mechanoluminescence illuminates new possibilities for next-generation materials
Peer-Reviewed Publication
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A research team has successfully engineered a japonica rice variety using CRISPR/Cas9 to simultaneously optimize plant structure and strengthen disease resistance—two key goals in modern crop breeding.
High-entropy oxides (HEOs) have emerged as a promising class of memristive materials, characterized by entropy-stabilized crystal structures, multivalent cation coordination, and tunable defect landscapes. These intrinsic features enable forming-free resistive switching, multilevel conductance modulation, and synaptic plasticity, making HEOs attractive for neuromorphic computing. This review outlines recent progress in HEO-based memristors across materials engineering, switching mechanisms, and synaptic emulation. Particular attention is given to vacancy migration, phase transitions, and valence-state dynamics—mechanisms that underlie the switching behaviors observed in both amorphous and crystalline systems. Their relevance to neuromorphic functions such as short-term plasticity and spike-timing-dependent learning is also examined. While encouraging results have been achieved at the device level, challenges remain in conductance precision, variability control, and scalable integration. Addressing these demands a concerted effort across materials design, interface optimization, and task-aware modeling. With such integration, HEO memristors offer a compelling pathway toward energy-efficient and adaptable brain-inspired electronics.