How sputtering could drive the adoption of high-performance ScAlN-based transistors
Peer-Reviewed Publication
Updates every hour. Last Updated: 23-Dec-2025 02:11 ET (23-Dec-2025 07:11 GMT/UTC)
Scandium aluminium nitride (ScAlN) has emerged as a promising barrier material for improving the performance of gallium-nitride (GaN)-based high electron mobility transistors (HEMTs). However, current methods for growing ScAlN layers on GaN require expensive equipment and high temperatures. In a new study, researchers investigated how sputtering can be used to successfully grow ScAlN layers on GaN at relatively lower temperatures and reduced costs, paving the way towards commercialization of high-performance ScAlN-based GaN devices.
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