Scandium aluminium nitride (ScAlN) has emerged as a promising barrier material for improving the performance of gallium-nitride (GaN)-based high electron mobility transistors (HEMTs). However, current methods for growing ScAlN layers on GaN require expensive equipment and high temperatures. In a new study, researchers investigated how sputtering can be used to successfully grow ScAlN layers on GaN at relatively lower temperatures and reduced costs, paving the way towards commercialization of high-performance ScAlN-based GaN devices.

The accurate estimation of bearing stratum depth, the subsurface soil or rock layer depth that can support a foundation, is key to preventing soil-related disasters in earthquake-prone areas and ensuring a building’s structural safety. However, traditional methods to assess this depth involve high costs, time, and labor. Now, researchers from Japan have demonstrated improved depth prediction accuracy by employing machine learning algorithms, making it both cost-effective and a generalizable alternative to traditional field surveys.

This review discusses the evolution, challenges, and innovations of antibody-drug conjugates (ADCs) in cancer treatment. It focuses on the importance of precise target selection and engineering to improve efficacy while minimizing off-target toxicities. Recent advances such as pH-dependent antibodies, dual-epitope targeting, and AI-guided profiling are highlighted as promising strategies to enhance safety and therapeutic impact.

Newly developed DNA nanostructures can form flexible, fluid, and stimuli-responsive condensates without relying on chemical cross-linking, report researchers from Institute of Science Tokyo and Chuo University. Owing to a rigid tetrahedral motif that binds the linkers in a specific direction, the resulting string-like structures form condensates with exceptional fluidity and stability. These findings pave the way for adaptive soft materials with potential applications in drug delivery, artificial organelles, and bioengineering platforms.