Gate-voltage-controlled topological phase transition achieved in β-Ag2Te, paving the way for a new class of low-power electronics
Peer-Reviewed Publication
Updates every hour. Last Updated: 16-Jun-2026 14:16 ET (16-Jun-2026 18:16 GMT/UTC)
Topological phase transition is attracting great attention in condensed matter physics, and its gate-voltage-reversible control is essential for electrically driven topological devices. Recently, Professor Jinxiong Wu’s team at Nankai University achieved the first gate-voltage-reversible topological phase transition in β-Ag2Te nanodevices, evidenced by a π Berry phase transition. Theoretical attributes this to the Stark effect modulating band structure. Based on this, they built a prototype topological phase transition transistor with on-off ratio exceeding 104, opening a new route for electrically controlled topological devices.
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• The work is supported through a grant from the DEVCOM Army Research Office.