By imaging the superfluid density and superconducting transition temperature in an infinite-layer superconductor, researchers revealed a strong correlation between the two quantities. This correlation is quantitatively similar to that reported in cuprate superconductors, hinting at a close connection between the superconductivity of infinite-layer nickelates and that of cuprates.

The utilization of solar energy to address energy and environmental challenges has a seen a significant growth in recent years. Metal halides, which offer unique advantages such as tunable bandgaps, high light absorption efficiencies, favorable product release rates, and low exciton binding energies, have emerged as excellent photocatalysts for energy conversion. This paper reviews the recent advancements in both all-inorganic and organic-inorganic hybrid metal halide photocatalytic materials, including the fundamental mechanisms of photocatalytic CO2 reduction, various synthesis strategies for metal halide photocatalysts, and their applications in the field of photocatalysis. Finally, it examines the current challenges associated with metal halide materials and explores potential solutions for metal halide materials, along with their future prospects in photocatalysis applications.

Gallium nitride (GaN) nanostructures are highly promising for photoelectrochemical (PEC) water splitting due to their excellent electron mobility, chemical stability, and large surface area. However, the wide bandgap (~3.4 eV) of GaN limits its ability to absorb a broad spectrum of solar radiation, restricting its PEC performance. To address this limitation, MoS₂/GaN nanorods (NRs) heterostructures for enhanced PEC applications were fabricated on thin tungsten foil using a combination of atmospheric pressure chemical vapor deposition (CVD) and laser molecular beam epitaxy (LMBE). The Raman spectroscopy and X-ray diffraction revealed the hexagonal phase of GaN and MoS₂. X-ray photoelectron spectroscopy examined the electronic states of the GaN and MoS₂. PEC measurements revealed that the MoS₂-decorated GaN NRs exhibited a photocurrent density of approximately172 μA/cm², nearly 2.5-fold compared to bare GaN NRs (~70 μA/cm²). The increased photocurrent density is ascribed to the Type II band alignment between MoS₂ and GaN, which promotes effective charge separation, the decrease in charge transfer resistance, and the increase in active sites. The findings of this work underscore that the CVD and LMBE technique fabricated MoS₂/GaN heterostructures on W metal foil substrate can provide the vital strategy to raise the PEC efficiency toward solar water splitting.