This study leverages advanced genomics and machine learning to refine the understanding of key fruit quality traits in peaches. Using whole-genome resequencing data from an F1 progeny of two distant peach cultivars, the researchers constructed an ultra-high-density genetic map, identifying key quantitative trait loci (QTLs) for traits such as fruit shape, color, and maturity. Notably, the study introduces machine learning models for more accurate phenotyping of fruit color, revealing two previously undetectable QTLs for peach flesh color variation. These innovations provide a new framework for precision breeding, enhancing peach quality and other complex traits through improved mapping and phenotyping strategies.

Composite solid electrolytes (CSEs) are promising for solid-state Li metal batteries but suffer from inferior room-temperature ionic conductivity due to sluggish ion transport and high cost due to expensive active ceramic fillers. Here, a host–guest inversion engineering strategy is proposed to develop superionic CSEs using cost-effective SiO₂ nanoparticles as passive ceramic hosts and poly(vinylidene fluoride-hexafluoropropylene) (PVH) microspheres as polymer guests, forming an unprecedented “polymer guest-in-ceramic host” (i.e., PVH-in-SiO₂) architecture differing from the traditional “ceramic guest-in-polymer host”. The PVH-in-SiO₂ exhibits excellent Li-salt dissociation, achieving high-concentration free Li⁺. Owing to the low diffusion energy barriers and high diffusion coefficient, the free Li⁺ is thermodynamically and kinetically favorable to migrate to and transport at the SiO₂/PVH interfaces. Consequently, the PVH-in-SiO₂ delivers an exceptional ionic conductivity of 1.32 × 10⁻³ S cm⁻¹ at 25 °C (vs. typically 10⁻⁵–10⁻⁴ S cm⁻¹ using high-cost active ceramics), achieved under an ultralow residual solvent content of 2.9 wt% (vs. 8–15 wt% in other CSEs). Additionally, PVH-in-SiO₂ is electrochemically stable with Li anode and various cathodes. Therefore, the PVH-in-SiO₂ demonstrates excellent high-rate cyclability in LiFePO₄|Li full cells (92.9% capacity-retention at 3C after 300 cycles under 25 °C) and outstanding stability with high-mass-loading LiFePO₄ (9.2 mg cm⁻¹) and high-voltage NCM622 (147.1 mAh g⁻¹). Furthermore, we verify the versatility of the host–guest inversion engineering strategy by fabricating Na-ion and K-ion-based PVH-in-SiO₂ CSEs with similarly excellent promotions in ionic conductivity. Our strategy offers a simple, low-cost approach to fabricating superionic CSEs for large-scale application of solid-state Li metal batteries and beyond.

Emerging two-dimensional (2D) semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level thickness. As the stacking process advances, the complexity and cost of nanosheet field-effect transistors (NSFETs) and complementary FET (CFET) continue to rise. The 1 nm technology node is going to be based on Si-CFET process according to international roadmap for devices and systems (IRDS) (2022, https://irds.ieee.org/), but not publicly confirmed, indicating that more possibilities still exist. The miniaturization advantage of 2D semiconductors motivates us to explore their potential for reducing process costs while matching the performance of next-generation nodes in terms of area, power consumption and speed. In this study, a comprehensive framework is built. A set of MoS₂ NSFETs were designed and fabricated to extract the key parameters and performances. And then for benchmarking, the sizes of 2D-NSFET are scaled to a extent that both of the Si-CFET and 2D-NSFET have the same average device footprint. Under these conditions, the frequency of ultra-scaled 2D-NSFET is found to improve by 36% at a fixed power consumption. This work verifies the feasibility of replacing silicon-based CFETs of 1 nm node with 2D-NSFETs and proposes a 2D technology solution for 1 nm nodes, i.e., “2D eq 1 nm” nodes. At the same time, thanks to the lower characteristic length of 2D semiconductors, the miniaturized 2D-NSFET achieves a 28% frequency increase at a fixed power consumption. Further, developing a standard cell library, these devices obtain a similar trend in 16-bit RISC-V CPUs. This work quantifies and highlights the advantages of 2D semiconductors in advanced nodes, offering new possibilities for the application of 2D semiconductors in high-speed and low-power integrated circuits.

Research led by Professor Philip C. Y. Chow and his PhD student Ms. Yumeng Song from the Department of Mechanical Engineering under the Faculty of Engineering of the University of Hong Kong (HKU), has revealed how minute structural modifications in advanced perovskite materials critically influence their light-emission properties. This study, conducted in collaboration with research teams from The Hong Kong Polytechnic University and the Southern University of Science and Technology, provides valuable insights and practical guidance for designing brighter, more efficient, and versatile materials. The findings could accelerate the development of next-generation optoelectronic and quantum devices.

Understanding the genetic resistance to biotic stresses in peach (Prunus persica) and apricot (Prunus armeniaca) is crucial for sustainable fruit production. A comprehensive study was conducted using Genome-Wide Association Studies (GWAS) across multiple environments, identifying key genetic markers associated with resistance to seven major pests and diseases. This study uncovered genotype-by-environment interactions (G × E), highlighting the complexity of breeding for disease resistance in these crops. The results provide valuable insights into the genetic architecture of resistance, offering a solid foundation for marker-assisted selection (MAS) in future fruit tree breeding programs aimed at improving pest and disease tolerance.

A research team compared cassava—naturally adapted to tropical climates—with heat-sensitive potato to understand how each responds to high temperature stress.